SI3499DV Datasheet, PDF (1/6 Pages) Vishay Siliconix – P-Channel 1.5-V (G-S) MOSFET

New Product
P-Channel 1.5-V (G-S) MOSFET
Si3499DV
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.023 @ V_GS = −4.5 V
−8
0.029 @ V_GS = −2.5 V
0.036 @ V_GS = −1.8 V
0.048 @ V_GS = −1.5 V
I_D (A)
−7
−6.2
−5.2
−5.0
Q_g (Typ)
28
3 mm
TSOP-6
Top View
1
6
2
5
3
4
2.85 mm
Ordering Information: Si3499DV-T1—E3
Marking Code:
B3xxx
FEATURES
D TrenchFETr Power MOSFET: 1.5-V Rated
D Ultra-Low On-Resistance
D 100% R_g Tested
APPLICATIONS
D Load Switch for Portable Devices
(4) S
(3) G
(1, 2, 5, 6) D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 85_C
T_A = 25_C
T_A = 85_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
−8
"5
−7
−5.3
−3.6
−3.9
−20
−1.7
−0.9
2.0
1.1
1.0
0.6
−55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 73138
Pending—Rev. A, 18-Oct-04
t v 5 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
45
90
25
Maximum
62.5
110
30
Unit
_C/W
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