SI3495DV_08 Datasheet, PDF (1/6 Pages) Vishay Siliconix – P-Channel 20-V (D-S), 1.5-V (G-S) MOSFET

New Product
Si3495DV
Vishay Siliconix
P-Channel 20-V (D-S), 1.5-V (G-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
0.024 at V_GS = - 4.5 V
0.030 at V_GS = - 2.5 V
- 20
0.038 at V_GS = - 1.8 V
0.048 at V_GS = - 1.5 V
I_D (A)
-7
- 6.2
- 5.2
- 5.0
FEATURES
• TrenchFET^® Power MOSFET: 1.5 V Rated
• Ultra-Low On-Resistance
• 100 % R_g Tested
APPLICATIONS
• Load Switch and PA Switch for Portable
Devices
RoHS
COMPLIANT
3 mm
TSOP-6
Top V iew
1
6
2
5
3
4
(4) S
(3) G
2.85 mm
Ordering Information: Si3495DV-T1-E3 (Lead (Pb)-free)
Marking Code:
95xxx
(1, 2, 5, 6) D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
5 sec
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
- 20
V
V_GS
±5
Continuous Drain Current (T_J = 150 °C)^a
Pulsed Drain Current
T_A = 25 °C
T_A = 85 °C
I_D
-7
- 3.6
- 5.3
- 3.9
A
I_DM
- 20
Continuous Source Current (Diode Conduction)^a
I_S
- 1.7
- 0.9
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 85 °C
P_D
2.0
1.1
1.0
0.6
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 Board.
t ≤ 5 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
45
90
25
Maximum
62.5
110
30
Unit
°C/W
Document Number: 73135
S-71321-Rev. B, 02-Jul-07
www.vishay.com
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