SI3493BDV Datasheet, PDF (1/7 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

New Product
P-Channel 20-V (D-S) MOSFET
Si3493BDV
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
0.0275 at V_GS = - 4.5 V
- 20
0.034 at V_GS = - 2.5 V
0.045 at V_GS = - 1.8 V
I_D (A)
- 8.0^a
- 7.9
- 2.2
Q_g (Typ)
26.2 nC
TSOP-6
Top View
FEATURES
• TrenchFET^® Power MOSFET
• PWM Optimized
• 100 % Rg Tested
APPLICATIONS
• Load Switch
• PA Switch
• Battery Switch
(4) S
1
6
3 mm
2
5
3
4
2.85 mm
Marking Code
AK XXX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si3493BDV-T1-E3 (Lead (Pb)-free)
(3) G
(1, 2, 5, 6) D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
T_C = 25 °C
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
Limit
- 20
± 8.0
- 8.0^a
- 7.03
- 7.0^{b, c}
- 5.8^{b, c}
- 25
- 2.48
- 1.73^{b, c}
2.97
1.9
2.08^{b, c}
1.33^{b, c}
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot (Drain)
t ≤ 5 sec
Steady State
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 sec.
d. Maximum under Steady State conditions is 90 °C/W.
Symbol
R_thJA
R_thJF
Typical
50
35
Maximum
60
42
RoHS
COMPLIANT
Unit
V
A
W
°C
Unit
°C/W
Document Number: 74478
S-70537-Rev. A, 26-Mar-07
www.vishay.com
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