SI3481DV_06 Datasheet, PDF (1/6 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

P-Channel 30-V (D-S) MOSFET
Si3481DV
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
0.048 at V_GS = - 10 V
- 30
0.079 at V_GS = - 4.5 V
I_D (A)
- 5.3
- 4.1
FEATURES
• TrenchFET^® Power MOSFET
APPLICATIONS
• Load Switch
RoHS
COMPLIANT
3 mm
TSOP-6
Top View
1
6
2
5
3
4
2.85 mm
Ordering Information: Si3481DV-T1-E3 (Lead (Pb)-free)
(4) S
(3) G
(1, 2, 5, 6) D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
5 sec
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
- 30
V
V_GS
± 20
Continuous Drain Current (T_J = 150 °C)^a
Pulsed Drain Current
T_A = 25 °C
T_A = 70 °C
I_D
- 5.3
- 4.2
- 4.0
- 3.2
A
I_DM
- 20
Continuous Source Current (Diode Conduction)^a
I_S
- 1.7
- 0.95
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 70 °C
P_D
2.0
1.14
1.3
0.73
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 Board.
t ≤ 5 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
55
90
30
Maximum
62.5
110
36
Unit
°C/W
Document Number: 72105
S-60422-Rev. C, 20-Mar-06
www.vishay.com
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