SI3477DV Datasheet, PDF (1/11 Pages) Vishay Siliconix – P-Channel 12 V (D-S) MOSFET

New Product
P-Channel 12 V (D-S) MOSFET
Si3477DV
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
- 12
R_DS(on) ()
0.0175 at V_GS = - 4.5 V
0.023 at V_GS = - 2.5 V
0.033 at V_GS = - 1.8 V
I_D (A)^a
-8
-8
-8
Q_g (Typ.)
28.3 nC
TSOP-6
Top View
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• PWM Optimized
• 100 % R_g Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch
• DC/DC Converters
(4) S
1
6
3 mm
2
5
3
4
2.85 mm
Marking Code
BB XXX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si3477DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
(3) G
(1, 2, 5, 6) D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
T_C = 25 °C
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
Limit
- 12
± 10
- 8^a
- 8^a
- 8^{a, b, c}
- 7.2^{b, c}
- 40
- 3.5
- 1.67^{b, c}
4.2
2.7
2.0^{b, c}
1.3^{b, c}
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
t5s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 110 °C/W.
Symbol
R_thJA
R_thJF
Document Number: 70865
S10-1536-Rev. A, 19-Jul-10
Typical
50
22
Maximum
62.5
30
Unit
°C/W
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