SI3476DV Datasheet, PDF (1/11 Pages) Vishay Siliconix – N-Channel 80 V (D-S) MOSFET

N-Channel 80 V (D-S) MOSFET
Si3476DV
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
80
R_DS(on) () Max.
0.093 at V_GS = 10 V
0.108 at V_GS = 6 V
0.126 at V_GS = 4.5 V
I_D (A)^a
4.6
4.3
4
Q_g (Typ.)
2.6
TSOP-6
Top View
FEATURES
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Load Switch for Portable Applications
• LED Backlight Switch
• DC/DC Converter
• Boost Converter
D
(1, 2, 5, 6)
D
1
3 mm D
2
G
3
6
D
5
D
4
S
2.85 mm
Marking Code
BG XX
Lot Traceability
and Date Code
Part # Code
G
(3)
(4)
S
N-Channel MOSFET
Ordering Information: Si3476DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
80
V_GS
± 20
V
T_C = 25 °C
4.6
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
3.7
3.5^b,c
A
T_A = 70 °C
2.8^b,c
Pulsed Drain Current (t = 100 µs)
I_DM
18
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
3
1.7^b,c
A
T_C = 25 °C
3.6
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
2.3
2^b,c
W
T_A = 70 °C
1.3^b,c
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^b,d
Maximum Junction-to-Foot (Drain)
t 5 s
Steady State
Notes:
a. Based on T_C = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 110 °C/W.
Symbol
R_thJA
R_thJF
Typical
50
28
Maximum
62.5
35
Unit
°C/W
Document Number: 62884
For technical questions, contact: [e-mail]
www.vishay.com
S13-1818-Rev. A, 12-Aug-13
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000