SI3475DV Datasheet, PDF (1/7 Pages) Vishay Siliconix – P-Channel 200-V (D-S) MOSFET

New Product
P-Channel 200-V (D-S) MOSFET
Si3475DV
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
- 200
1.61 at V_GS = - 10 V
1.65 at V_GS = - 6 V
I_D (A)^a
- 0.95
- 0.93
Q_g (Typ)
8 nC
FEATURES
• TrenchFET^® Power MOSFET
• 100 % R_g and UIS Tested
APPLICATIONS
RoHS
COMPLIANT
• Active Clamp Circuits in DC/DC Power Supplies
TSOP-6
Top View
S
D
1
6
D
3 mm D
2
G
3
5
D
4
S
2.85 mm
Marking Code
AI XXX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si3475DV-T1-E3 (Lead (Pb)-free
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
T_C = 25 °C
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
Pulsed Drain Current
T_A = 70 °C
I_DM
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
T_C = 25 °C
T_A = 25 °C
I_S
L = 0.1 mH
I_AS
E_AS
T_C = 25 °C
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
Operating Junction and Storage Temperature Range
T_A = 70 °C
T_J, T_stg
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot
t ≤ 5 sec
Steady State
Notes:
a. T_C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 sec.
d. Maximum under Steady State conditions is 110 °C/W.
Symbol
R_thJA
R_thJF
Typical
51
32
G
D
P-Channel MOSFET
Limit
- 200
± 20
- 0.95^a
- 0.77
- 0.75^b,c
- 0.59^b,c
-3
- 2.6
1.6^b,c
3
0.45
3.2
2.1
2^b,c
1.25^b,c
- 55 to 150
Unit
V
A
mJ
W
°C
Maximum
62.5
39
Unit
°C/W
Document Number: 74249
S-62239–Rev. A, 06-Nov-06
www.vishay.com
1