SI3467DV_08 Datasheet, PDF (1/6 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

New Product
P-Channel 20-V (D-S) MOSFET
Si3467DV
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.054 @ V_GS = −10 V
−20
0.094 @ V_GS = −4.5 V
I_D (A)
−5.0
−3.8
FEATURES
D TrenchFETr Power MOSFET
APPLICATIONS
D Load Switch
− PC
− Game Machine
TSOP-6
Top View
1
6
3 mm
2
5
3
4
Marking Code:
7Cxxx
2.85 mm
Ordering Information: Si3467DV-T1—E3 (lLead Free)
(4) S
(3) G
(1, 2, 5, 6) D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
−20
"20
−5.0
−3.8
−3.9
−3.0
−25
−1.7
−0.95
2.0
1.14
1.3
0.73
−55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72658
S-40238—Rev. B, 16-Feb-04
t v 5 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
50
90
30
Maximum
62.5
110
36
Unit
_C/W
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