SI3465DV Datasheet, PDF (1/6 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

New Product
P-Channel 20-V (D-S) MOSFET
Si3465DV
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.080 @ V_GS = −10 V
−20
0.170 @ V_GS = −4.5 V
I_D (A)
−4.0
−2.7
FEATURES
D TrenchFETr Power MOSFET
APPLICATIONS
D Load Switch
− Notebook PC
− Game Machine
3 mm
TSOP-6
Top View
1
6
2
5
(4) S
(3) G
3
4
2.85 mm
Ordering Information: Si3465DV-T1—E3 (Lead Free)
Marking Code: 5C
(1, 2, 5, 6) D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
−20
"20
−4.0
−3.0
−3.2
−2.4
−20
−1.7
−0.95
2.0
1.14
1.3
0.73
−55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72787
S-40410—Rev. A, 15-Mar-04
t v 5 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
52
92
34
Maximum
62.5
110
41
Unit
_C/W
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