SI3460DDV Datasheet, PDF (1/7 Pages) Vishay Siliconix – N-Channel 20 V (D-S) MOSFET

N-Channel 20 V (D-S) MOSFET
Si3460DDV
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
20
R_DS(on) (Ω)
0.028 at V_GS = 4.5 V
0.032 at V_GS = 2.5 V
0.038 at V_GS = 1.8 V
I_D (A)^d
7.9
7.4
6.8
Q_g (Typ.)
6.7 nC
TSOP-6
Top View
D
1
6
D
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• DC/DC Converters
• Boost Converters
• Load Switch
D
(1, 2, 5, 6)
3 mm D
2
G
3
5
D
4
S
2.85 mm
Marking Code
BA XXX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si3460DDV-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
Continuous Source-Drain Diode Current
Avalanche Current
T_C = 25 °C
T_A = 25 °C
Single Avalanche Energy
T_C = 25 °C
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^{d, e}
V_DS
V_GS
I_D
I_DM
I_S
I_AS
E_AS
P_D
T_J, T_stg
G
(3)
(4)
S
N-Channel MOSFET
Limit
20
±8
7.9
6.3
6.2^{a, b}
5.0^{a, b}
20
2.2
1.4^{a, b}
8
3.2
2.7
1.7
1.7^{a, b}
1.1^{a, b}
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{a, c}
t≤5s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. Maximum under steady state conditions is 120 °C/W.
d. Based on T_C = 25 °C.
Document Number: 66572
S10-0789-Rev. A, 05-Apr-10
Symbol
R_thJA
R_thJF
Typical
61
38
Maximum
74
46
Unit
°C/W
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