SI3460BDV Datasheet, PDF (1/7 Pages) Vishay Siliconix – N-Channel 20-V (D-S) MOSFET

New Product
N-Channel 20-V (D-S) MOSFET
Si3460BDV
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
0.027 at V_GS = 4.5 V
20
0.032 at V_GS = 2.5 V
0.040 at V_GS = 1.8 V
I_D (A)^a
8
8
8
Q_g (Typ)
9 nC
FEATURES
• TrenchFET^® Power MOSFET
APPLICATIONS
• Load Switch for Portable Applications
• Load Switch for Low Voltage Bus
RoHS
COMPLIANT
TSOP-6
Top View
D
1
6
D
3 mm D
2
5
D
G
3
4
S
2.85 mm
Ordering Information: Si3460BDV-T1-E3 (Lead (Pb)-free)
Marking Code
AF XXX
Lot Traceability
and Date Code
Part # Code
D
(1, 2, 5, 6)
G
(3)
(4)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
T_C = 25 °C
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^{d, e}
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
Limit
20
±8
8^a
7.1
6.7^{b, c}
5.4^{b, c}
20
2.9
1.7^{b, c}
3.5
2.2
2^{b, c}
1.3^{b, c}
- 55 to 150
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot (Drain)
t ≤ 5 sec
Steady State
Notes:
a. Package limited
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 sec.
d. Maximum under steady state conditions is 110 °C/W.
Symbol
R_thJA
R_thJF
Typical
50
30
Maximum
62.5
36
Unit
V
A
W
°C
Unit
°C/W
Document Number: 74412
S-70187-Rev. A, 29-Jan-07
www.vishay.com
1