SI3459DV Datasheet, PDF (1/4 Pages) Vishay Siliconix – P-Channel 60-V (D-S) MOSFET

New Product
P-Channel 60-V (D-S) MOSFET
Si3459DV
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.220 @ V_GS = –10 V
–60
0.310 @ V_GS = –4.5 V
I_D (A)
"2.2
"1.9
3 mm
TSOP-6
Top View
1
6
2
5
3
4
2.85 mm
(4) S
(3) G
(1, 2, 5, 6) D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^{a, b}
Pulsed Drain Current
Single Avalanche Current (L = 0.1 mH)
Maximum Power Dissipation^{a, b}
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_AS
P_D
T_J, T_stg
–60
"20
"2.2
"1.7
"10
–7
2
1.3
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Lead
Notes
a. Surface Mounted on FR4 Board.
b. t v 5 sec
Document Number: 70877
S-49635—Rev. B, 29-Nov-99
t v 5 sec
Steady State
Steady State
Symbol
R_thJA
R_thJL
Typical
106
35
Maximum
62.5
Unit
_C/W
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