SI3459BDV Datasheet, PDF (1/7 Pages) Vishay Siliconix – P-Channel 60-V (D-S) MOSFET

New Product
P-Channel 60-V (D-S) MOSFET
Si3459BDV
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
0.216 at V_GS = - 10 V
- 60
0.288 at V_GS = - 4.5 V
I_D (A)^d
- 2.9
- 2.5
Q_g (Typ.)
4.4 nC
FEATURES
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
APPLICATIONS
• Load Switch
RoHS
COMPLIANT
TSOP-6
Top View
D
1
6
D
3 mm D
2
5
D
G
3
4
S
2.85 mm
Ordering Information: Si3459BDV-T1-E3 (Lead (Pb)-free)
Marking Code
AS XXX
Lot Traceability
and Date Code
Part # Code
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
T_C = 25 °C
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
Soldering Recommendations (Peak Temperature)
Limit
- 60
± 20
- 2.9
- 2.3
- 2.2^{a, b}
- 1.8^{a, b}
-8
- 2.9
- 1.7^{a, b}
3.3
2.1
2^{a, b}
1.3^{a, b}
- 55 to 150
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{a, c}
Maximum Junction-to-Foot (Drain)
t≤5s
Steady State
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. Maximum under steady state conditions is 110 °C/W.
d. Based on T_C = 25 °C.
Symbol
R_thJA
R_thJF
Typical
53
32
Maximum
62.5
38
Unit
V
A
W
°C
Unit
°C/W
Document Number: 69954
S-80430-Rev. A, 03-Mar-08
www.vishay.com
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