SI3458BDV_09 Datasheet, PDF (1/11 Pages) Vishay Siliconix – N-Channel 60-V (D-S) MOSFET

N-Channel 60-V (D-S) MOSFET
Si3458BDV
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.100 at V_GS = 10 V
60
0.128 at V_GS = 4.5 V
I_D (A)^d
4.1
3.6
Q_g (Typ.)
3.5 nC
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
• Compliant to RoHS Directive 2002/95/EC
TSOP-6
Top View
APPLICATIONS
• Load Switch for Portable Applications
• LED Backlight Switch
• DC/DC Converter
D
1
6
D
3 mm D
2
5
D
G
3
4
S
2.85 mm
Marking Code
AN XXX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si3458BDV-T1-E3 (Lead (Pb)-free)
Si3458BDV-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
(1, 2, 5, 6)
G
(3)
(4)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
60
V
V_GS
± 20
T_C = 25 °C
4.1
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
3.2
3.2^{a, b}
T_A = 70 °C
2.5^{a, b}
A
Pulsed Drain Current
I_DM
10
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
2.9
1.7^{a, b}
T_C = 25 °C
3.3
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
2.1
2^{a, b}
W
T_A = 70 °C
1.3^{a, b}
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{a, c}
Maximum Junction-to-Foot (Drain)
t≤5s
Steady State
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. Maximum under steady state conditions is 110 °C/W.
d. Based on T_C = 25 °C.
Symbol
R_thJA
R_thJF
Typical
53
32
Maximum
62.5
38
Unit
°C/W
Document Number: 69501
S09-0660-Rev. B, 20-Apr-09
www.vishay.com
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