SI3456DV Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET

N-Channel 30-V (D-S) MOSFET
Si3456DV
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.045 @ V_GS = 10 V
30
0.065 @ V_GS = 4.5 V
I_D (A)
"5.1
"4.3
3 mm
TSOP-6
Top View
1
6
2
5
3
4
2.85 mm
(1, 2, 5, 6) D
(3) G
(4) S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
V_DS
"30
V_GS
"20
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
I_D
I_DM
I_S
P_D
T_J, T_stg
"5.1
"4.1
"20
"1.7
2
1.3
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Notes
a. Surface Mounted on FR4 Board, t v 5 sec.
Document Number: 70659
S-56945—Rev. B, 23-Nov-98
Symbol
R_thJA
Limit
62.5
Unit
_C/W
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