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| SI3456DDV-T1-E3 Datasheet, PDF (1/11 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET | |||
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New Product
N-Channel 30-V (D-S) MOSFET
Si3456DDV
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.040 at VGS = 10 V
30
0.050 at VGS = 4.5 V
ID (A)d
6.3
5.7
Qg (Typ.)
2.8 nC
TSOP-6
Top View
FEATURES
⢠Halogen-free According to IEC 61249-2-21
Definition
⢠TrenchFET® Power MOSFET
⢠Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
⢠Load Switch
⢠HDD
⢠DC/DC Converter
D
1
6
D
3 mm D
2
G
3
5
D
4
S
2.85 mm
Marking Code
AY XXX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si3456DDV-T1-E3 (Lead (Pb)-free)
Si3456DDV-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
(1, 2, 5, 6)
G
(3)
(4)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
30
V
VGS
± 20
TC = 25 °C
6.3
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
5.1
5.0a, b
TA = 70 °C
4.0a, b
A
Pulsed Drain Current
IDM
20
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
2.2
1.4a, b
TC = 25 °C
2.7
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
1.7
1.7a, b
W
TA = 70 °C
1.1a, b
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, c
Maximum Junction-to-Foot (Drain)
tâ¤5s
Steady State
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. Maximum under steady state conditions is 120 °C/W.
d. Based on TC = 25 °C.
Symbol
RthJA
RthJF
Typical
61
38
Maximum
74
46
Unit
°C/W
Document Number: 69075
S09-1399-Rev. B, 20-Jul-09
www.vishay.com
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