SI3455DV_05 Datasheet, PDF (1/5 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

P-Channel 30-V (D-S) MOSFET
Si3455DV
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.100 @ V_GS = −10 V
−30
0.190 @ V_GS = −4.5 V
I_D (A)
"3.5
"2.5
FEATURES
D TrenchFETr Power MOSFET
D Lead (Pb)-Free Version is RoHS
Compliant
Available
3 mm
TSOP-6
Top View
1
6
2
5
3
4
2.85 mm
Ordering Information: Si3455DV-T1
Si3455DV-T1—E3 (Lead (Pb)-Free)
(4) S
(3) G
(1, 2, 5, 6) D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
−30
"20
"3.5
"2.7
"20
−1.7
2.0
1.3
−55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Notes
a. Surface Mounted on FR4 Board, t v 5 sec.
For SPICE model information via the Worldwide Web: http://www.Siliconix.com/www/product/spice.htm
Document Number: 70194
S-50694—Rev. E, 18-Apr-05
Symbol
R_thJA
Limit
62.5
Unit
_C/W
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