SI3454CDV Datasheet, PDF (1/7 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

New Product
N-Channel 30-V (D-S) MOSFET
Si3454CDV
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.050 at V_GS = 10 V
30
0.079 at V_GS = 4.5 V
I_D (A)^a
4.2
3.0
Q_g (Typ.)
2.6
FEATURES
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
APPLICATIONS
• Load Switch
- Notebook PC
RoHS
COMPLIANT
TSOP-6
Top View
D
1
3 mm D
2
G
3
6
D
5
D
4
S
2.85 mm
Marking Code
AV XX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si3454CDV-T1-E3 (Lead (Pb)-free)
D
(1, 2, 5, 6)
G
(3)
(4)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
V_GS
30
± 20
V
T_C = 25 °C
4.2
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
3.3
3.8^{b, c}
A
T_A = 70 °C
3.1^{b, c}
Pulsed Drain Current
I_DM
20
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
1.25
1.04^{b, c}
A
T_C = 25 °C
1.5
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
0.9
1.25^{b, c}
W
T_A = 70 °C
0.8^{b, c}
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot (Drain)
t≤5s
Steady State
Notes:
a. Based on T_C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 145 °C/W.
Symbol
R_thJA
R_thJF
Typical
80
70
Maximum
100
85
Unit
°C/W
Document Number: 68607
S-81194-Rev. A, 26-May-08
www.vishay.com
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