SI3451DV Datasheet, PDF (1/7 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

New Product
P-Channel 20-V (D-S) MOSFET
Si3451DV
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
0.115 at V_GS = - 4.5 V
- 20
0.205 at V_GS = - 2.5 V
I_D (A)^a
- 2.8
- 2.1
Q_g (Typ)
3.2 nC
FEATURES
• TrenchFET^® Power MOSFET
• PWM Optimized
• 100 % R_g tested
RoHS
COMPLIANT
3 mm
TSOP-6
Top View
1
6
2
5
3
4
2.85 mm
Ordering Information: Si3451DV-T1-E3 (Lead (Pb)-free)
(4) S
Marking Code
AD XXX
Lot Traceability
and Date Code
Part # Code
(3) G
(1, 2, 5, 6) D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
T_C = 25 °C
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
Limit
- 20
± 12
- 2.8
- 2.3
- 2.6^{b, c}
- 2.1^{b, c}
- 10
- 1.76
- 1.04^{b, c}
2.1
1.3
1.25^{b, c}
0.8^{b, c}
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot (Drain)
t ≤ 5 sec
Steady State
Notes:
a.
b.
BSausrfeadceonMTou_{Cn=te2d5o°nC1. " x 1" FR4 board.}
c. t = 5 sec.
d. Maximum under Steady State conditions is 120 °C/W.
Symbol
R_thJA
R_thJF
Typical
75
70
Maximum
100
85
Unit
V
A
W
°C
Unit
°C/W
Document Number: 73701
S-71597-Rev. B, 30-Jul-07
www.vishay.com
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