SI3447BDV Datasheet, PDF (1/5 Pages) Vishay Siliconix – P-Channel 12-V (D-S) MOSFET

P-Channel 12-V (D-S) MOSFET
Si3447BDV
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.040 @ V_GS = −4.5 V
−12
0.053 @ V_GS = −2.5 V
0.072 @ V_GS = −1.8 V
I_D (A)
−6.0
−5.2
−4.5
FEATURES
D TrenchFETr Power MOSFET: 1.8-V Rated
D Ultra Low On-Resistance
APPLICATIONS
D Load Switch
D PA Switch
3 mm
TSOP-6
Top View
1
6
2
5
3
4
2.85 mm
Ordering Information: Si3447BDV-T1
Si3447BDV-T1—E3 (Lead Free)
Marking Code:
B7xxx
(4) S
(3) G
(1, 2, 5, 6) D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
V_DS
−12
V_GS
"8
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 85_C
T_A = 25_C
T_A = 85_C
I_D
I_DM
I_S
P_D
T_J, T_stg
−6.0
−4.5
−4.3
−3.3
−20
−1.7
−0.9
2.0
1.1
1.0
0.6
−55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72020
S-40424—Rev. B, 15-Mar-04
t v 5 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
50
90
30
Maximum
62.5
110
36
Unit
_C/W
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