SI3446DV Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – Single N-Channel, 2.5V Specified PowerTrench MOSFET

N-Channel 2.5-V (G-S) MOSFET
Si3446DV
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.045 @ V_GS = 4.5 V
20
0.065 @ V_GS = 2.5 V
I_D (A)
5.3
4.4
FEATURES
D TrenchFETr Power MOSFET
D 100% R_g Tested
RoHS
COMPLIANT
3 mm
TSOP-6
Top View
1
6
2
5
3
4
2.85 mm
Ordering Information: Si3446DV-T1
Si3446DV-T1–E3 (Lead (Pb)–free)
(1, 2, 5, 6) D
(3) G
(4) S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
20
"12
5.3
4.2
20
1.7
2.0
1.3
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient^a
R_thJA
Notes
a. Surface Mounted on FR4 Board, t v 5 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70715
S-51451—Rev. C, 01-Aug-05
Limit
62.5
Unit
_C/W
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