SI3446ADV Datasheet, PDF (1/7 Pages) Vishay Siliconix – N-Channel 20-V (D-S) MOSFET

New Product
N-Channel 20-V (D-S) MOSFET
Si3446ADV
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
20
0.037 at V_GS = 4.5 V
0.065 at V_GS = 2.5V
I_D (A)^a
6
6
Q_g (Typ)
5.6 nC
TSOP-6
Top View
FEATURES
• TrenchFET^® Power MOSFET
• New Thermally Enhanced PowerPAK^®
ChipFET^® Package
- Small Footprint Area
- Low On-Resistance
- Thin 0.8-mm Profile
APPLICATIONS
• Load Switch for Portable Applications
• Small High Frequency DC-DC converter
RoHS
COMPLIANT
D
1
6
D
3 mm D
2
G
3
5
D
4
S
2.85 mm
Marking Code
AC XXX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si3446ADV–T1–E3 (Lead (Pb)–free)
D
(1, 2, 5, 6)
G
(3)
(4)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
T_C = 25 °C
V_DS
V_GS
20
V
± 12
6^a
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
T_A = 70 °C
5.9
5.8^b,c
4.7^b,c
A
Pulsed Drain Current
I_DM
20
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
2.7
1.7^b,c
T_C = 25 °C
3.2
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
2.1
2^b,c
W
T_A = 70 °C
1.25^b,c
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot
Notes:
a. Package Limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 sec.
d. Maximum under steady state conditions is 110 °C/W.
t ≤ 5 sec
Steady State
Document Number: 73772
S-60469–Rev. A, 27-Mar-06
Symbol
R_thJA
R_thJF
Typical
51
32
Maximum
62.5
39
Unit
°C/W
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