SI3445DV Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – P-Channel 1.8V Specified PowerTrench MOSFET

P-Channel 1.8-V (G-S) MOSFET
Si3445DV
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
−8
r_DS(on) (W)
0.042 @ V_GS = −4.5 V
0.060 @ V_GS = −2.5 V
0.080 @ V_GS = −1.8 V
I_D (A)
"5.6
"4.7
"2.9
3 mm
TSOP-6
Top View
1
6
2
5
3
4
2.85 mm
Ordering Information: Si3445DV-T1
Si3445DV-T1—E3 (Lead (Pb)-Free)
(4) S
(3) G
(1, 2, 5, 6) D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
V_DS
−8
V_GS
"8
Continuous Drain Current (T_J = 150_C)^{a, b}
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^{a, b}
Maximum Power Dissipation^{a, b}
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
I_D
I_DM
I_S
P_D
T_J, T_stg
"5.6
"4.5
"20
−1.7
2.0
1.3
−55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Notes
a. Surface Mounted on FR4 Board.
b. t v 5 sec.
t v 5 sec
Steady State
Symbol
R_thJA
Typical
106
Maximum
62.5
Unit
_C/W
Document Number: 70820
S-50129—Rev. B, 24-Jan-05
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