SI3445DV-T1-E3 Datasheet, PDF (1/9 Pages) Vishay Siliconix – P-Channel 1.8-V (G-S) MOSFET

P-Channel 1.8-V (G-S) MOSFET
Si3445DV
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.042 at V_GS = - 4.5 V
-8
0.060 at V_GS = - 2.5 V
0.080 at V_GS = - 1.8 V
I_D (A)
± 5.6
± 4.7
± 2.9
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFETs
• 1.8 V Rated
• Compliant to RoHS Directive 2002/95/EC
3 mm
TSOP-6
Top View
1
6
2
5
3
4
2.85 mm
Ordering Information: Si3445DV-T1-E3 (Lead (Pb)-free)
Si3445DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
(4) S
(3) G
(1, 2, 5, 6) D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
-8
V
V_GS
±8
Continuous Drain Current (T_J = 150 °C)^{a, b}
T_A = 25 °C
T_A = 70 °C
I_D
± 5.6
± 4.5
A
Pulsed Drain Current
I_DM
± 20
Continuous Source Current (Diode Conduction)^{a, b}
I_S
- 1.7
Maximum Power Dissipation^{a, b}
T_A = 25 °C
T_A = 70 °C
P_D
2.0
1.3
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Notes:
a. Surface Mounted on FR4 board.
b. t ≤ 5 s.
t≤5s
Steady State
Symbol
R_thJA
Typical
106
Maximum
62.5
Unit
°C/W
Document Number: 70820
S09-0766-Rev. C, 04-May-09
www.vishay.com
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