SI3445ADV Datasheet, PDF (1/5 Pages) Vishay Siliconix – P-Channel 1.8-V (G-S) MOSFET

New Product
P-Channel 1.8-V (G-S) MOSFET
Si3445ADV
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.042 @ V_GS = −4.5 V
−8
0.060 @ V_GS = −2.5 V
0.080 @ V_GS = −1.8 V
I_D (A)
−5.8
−4.9
−4.2
3 mm
TSOP-6
Top View
1
6
2
5
3
4
2.85 mm
Ordering Information: Si3445ADV-T1—E3
Marking Code: C5XXX
(4) S
(3) G
(1, 2, 5, 6) D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
−8
"8
−5.8
−4.4
−4.7
−3.5
−20
−1.7
−0.9
2.0
1.1
1.3
0.7
−55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
t v 5 sec
Steady State
Steady State
R_thJA
R_thJF
Notes
a. Surface Mounted on FR4 Board, t v 5 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 72859
S-40582—Rev. A, 29-Mar-04
Typical
50
90
22
Maximum
62.5
110
30
Unit
_C/W
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