SI3443DV-T1 Datasheet, PDF (1/5 Pages) Vishay Siliconix – P-Channel 2.5-V (G-S) MOSFET

P-Channel 2.5-V (G-S) MOSFET
Si3443DV
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.065 @ V_GS = –4.5 V
–20
0.090 @ V_GS = –2.7 V
0.100 @ V_GS = –2.5 V
I_D (A)
"4.4
"3.7
"3.5
3 mm
TSOP-6
Top View
1
6
2
5
3
4
2.85 mm
(4) S
(3) G
(1, 2, 5, 6) D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
–20
"12
"4.4
"3.5
"20
–1.7
2.0
1.3
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient^a
R_thJA
Notes
a. Surface Mounted on FR4 Board, t v 5 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70713
S-54948—Rev. B, 29-Sep-97
Limit
62.5
Unit
_C/W
www.vishay.com S FaxBack 408-970-5600
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