SI3443DDV Datasheet, PDF (1/11 Pages) Vishay Siliconix – P-Channel 20 V (D-S) MOSFET

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Si3443DDV
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
-20
R_DS(on) (Ω) MAX.
0.047 at V_GS = -4.5 V
0.080 at V_GS = -2.7 V
0.090 at V_GS = -2.5 V
TSOP-6 Single
S
4
D
5
D
6
I_D (A) ^{a, e}
-4
-4
-4
Q_g (TYP.)
9 nC
3
G
2
D
1
D
Top View
Marking Code: BN
Ordering Information:
Si3443DDV-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• TrenchFET^® power MOSFET
• PWM optimized
• 100 % R_g tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Hard disk drives
• DC/DC converter
• Load switch
• Portable devices
(4) S
(3) G
(1, 2, 5, 6) D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current (t = 300 μs)
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
T_C = 25 °C
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
LIMIT
-20
± 12
-4 ^e
-4 ^e
-4 ^{b, c, e}
-3.9 ^{b, c}
-20
-2.25
-1.42 ^{b, c}
2.7
1.7
1.7 ^{b, c}
1.1 ^{b, c}
-55 to 150
UNIT
V
A
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient ^{b, d}
t≤5s
Maximum Junction-to-Foot (Drain)
Steady State
Notes
a. Based on T_C = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 120 °C/W.
e. Package limited.
SYMBOL
R_thJA
R_thJF
TYPICAL
61
38
MAXIMUM
74
46
UNIT
°C/W
S14-0912-Rev. A, 28-Apr-14
1
Document Number: 62956
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000