SI3443CDV Datasheet, PDF (1/7 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

New Product
P-Channel 20-V (D-S) MOSFET
Si3443CDV
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
0.060 at V_GS = - 4.5 V
- 20
0.084 at V_GS = - 2.7 V
0.100 at V_GS = - 2.5 V
I_D (A)^a
- 4.7
- 3.9
- 3.4
Q_g (Typ)
7.53 nC
TSOP-6
Top View
FEATURES
• TrenchFET^® Power MOSFET
• PWM Optimized
• 100 % R_g Tested
APPLICATIONS
• HDD
• Asynchronous Rectification
• Load Switch for Portable Devices
(4) S
1
6
3 mm
2
5
3
4
2.85 mm
Marking Code
AL XXX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si3443CDV-T1-E3 (Lead (Pb)-free)
(3) G
(1, 2, 5, 6) D
P-Channel MOSFET
RoHS
COMPLIANT
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
T_C = 25 °C
T_A = 25 °C
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
Limit
- 20
± 12
- 5.97
- 4.6
- 4.7^{b, c}
- 3.4^{b, c}
- 20
- 2.67
- 1.71^{b, c}
3.2
2.05
2.0^{b, c}
1.28^{b, c}
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
t≤5s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Based on T_C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 110 °C/W.
Symbol
R_thJA
R_thJF
Typical
51
32
Maximum
62.5
39
Unit
V
A
W
°C
Unit
°C/W
Document Number: 74495
S-72338-Rev. A, 05-Nov-07
www.vishay.com
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