SI3443BDV Datasheet, PDF (1/10 Pages) Vishay Siliconix – P-Channel 2.5-V (G-S) MOSFET

P-Channel 2.5-V (G-S) MOSFET
Si3443BDV
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.060 at V_GS = - 4.5 V
- 20
0.090 at V_GS = - 2.7 V
0.100 at V_GS = - 2.5 V
I_D (A)
- 4.7
- 3.8
- 3.7
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
• Compliant to RoHS Directive 2002/95/EC
TSOP-6
Top V iew
3 mm
1
6
2
5
3
4
2.85 mm
Ordering Information: Si3443BDV-T1-E3 (Lead (Pb)-free)
Si3443BDV-T1-GE3 (Lead (Pb)-free and Halogen-free)
Part Marking Code: 3B
(4) S
(3) G
(1, 2, 5, 6) D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Drain-Source Voltage
V_DS
- 20
Gate-Source Voltage
V_GS
± 12
Continuous Drain Current (T_J = 150 °C)^a
T_A = 25 °C
T_A = 70 °C
I_D
- 4.7
- 3.8
- 3.6
- 2.8
Pulsed Drain Current
I_DM
- 20
Continuous Source Current (Diode Conduction)^a
I_S
- 1.7
- 0.9
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 70 °C
P_D
2.0
1.3
1.1
0.7
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on FR4 board, t ≤ 5 s.
t≤5s
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
50
90
30
For SPICE model information via the Worldwide Web: www.vishay.com/www/product/spice.htm
Document Number: 72749
S-09-0660-Rev. C, 20-Apr-09
Maximum
62.5
110
36
Unit
°C/W
www.vishay.com
1