SI3442BDV_09 Datasheet, PDF (1/9 Pages) Vishay Siliconix – N-Channel 2.5-V (G-S) MOSFET

N-Channel 2.5-V (G-S) MOSFET
Si3442BDV
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
20
R_DS(on) (Ω)
0.057 at V_GS = 4.5 V
0.090 at V_GS = 2.5 V
I_D (A)
4.2
3.4
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
3 mm
TSOP-6
Top View
1
6
2
5
3
4
2.85 mm
Ordering Information: Si3442BDV-T1-E3 (Lead (Pb)-free)
Si3442BDV-T1-GE3 (Lead (Pb)-free and Halogen-free)
Marking Code:
2Bxxx
(1, 2, 5, 6) D
(3) G
(4) S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
20
V
V_GS
± 12
Continuous Drain Current (T_J = 150 °C)^a
Pulsed Drain Current
T_A = 25 °C
T_A = 70 °C
I_D
4.2
3.0
3.4
2.4
A
I_DM
20
Continuous Source Current (Diode Conduction)^a
I_S
1.4
0.72
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 70 °C
P_D
1.67
0.86
1.07
0.55
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Note:
a. Surface Mounted on FR4 board, t ≤ 5 s.
t≤5s
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
75
120
70
Maximum
100
145
85
Unit
°C/W
Document Number: 72504
S09-2110-Rev. E, 12-Oct-09
www.vishay.com
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