SI3441DV-T1 Datasheet, PDF (1/5 Pages) Vishay Siliconix – P-Channel 2.5-V (G-S) MOSFET

P-Channel 2.5-V (G-S) MOSFET
Si3441DV
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.10 @ V_GS = - 4.5 V
- 20
0.135 @ V_GS = - 2.5 V
I_D (A)^b
- 3.3
- 2.9
3 mm
TSOP-6
Top View
1
6
2
5
3
4
2.85 mm
(4) S
(3) G
(1, 2, 5, 6) D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^{a, b}
T_A = 25_C
T_A = 70_C
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^{a, b}
Maximum Power Dissipation^{a, b}
T_A = 25_C
T_A = 70_C
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
- 20
"8
- 3.3
- 2.3
- 2.6
- 1.8
- 16
- 1.6
- 0.8
2.0
0.96
1.28
0.6
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum Junction-to-Ambient^a
t v 5 sec
50
Steady State
R_thJA
106
Maximum Junction-to-Foot (Drain)
Steady State
R_thJF
40
Notes
a. Surface Mounted on FR4 Board.
b. t v 5 sec
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 71839
S-20211—Rev. G, 01-Apr-02
Maximum
62.5
130
50
Unit
_C/W
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