SI3441BDV_08 Datasheet, PDF (1/6 Pages) Vishay Siliconix – P-Channel 2.5-V (G-S) MOSFET

P-Channel 2.5-V (G-S) MOSFET
Si3441BDV
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.090 @ V_GS = −4.5 V
−20
0.130 @ V_GS = −2.5 V
I_D (A)
−2.9
−2.45
3 mm
TSOP-6
Top View
1
6
2
5
3
4
2.85 mm
Ordering Information: Si3441BDV-T1
Si3441BDV-T1—E3 (Lead Free)
Marking Code:
B1xxx
(4) S
(3) G
(1, 2, 5, 6) D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
V_DS
−20
V_GS
"8
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
I_D
I_DM
I_S
P_D
T_J, T_stg
−2.9
−2.45
−2.35
−1.95
−16
−1.0
−0.72
1.25
0.86
0.8
0.55
−55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
t v 5 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
For SPICE model information via the Worldwide Web: http://www. vishay.com/www/product/spice.htm.
Document Number: 72028
S-40424—Rev. C, 15-Mar-04
Typical
80
120
70
Maximum
100
145
85
Unit
_C/W
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