SI3440DV_08 Datasheet, PDF (1/6 Pages) Vishay Siliconix – N-Channel 150-V (D-S) MOSFET

N-Channel 150-V (D-S) MOSFET
Si3440DV
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
150
0.375 at V_GS = 10 V
0.400 at V_GS = 6.0 V
I_D (A)
1.5
1.4
FEATURES
• TrenchFET^® Power MOSFET
• PWM Optimized for Fast Switching In Small
Footprint
• 100 % R_g Tested
RoHS
COMPLIANT
APPLICATIONS
• Primary Side Switch for Low Power DC/DC Converters
3 mm
TSOP-6
Top V iew
1
6
2
5
3
4
(1, 2, 5, 6) D
(3) G
2.85 mm
(4) S
Ordering Information: Si3440DV-T1-E3 (Lead (Pb)-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
150
V
V_GS
± 20
Continuous Drain Current (T_J = 175 °C)^a
Pulsed Drain Current
T_A = 25 °C
T_A = 85 °C
I_D
1.5
1.2
1.1
0.8
A
I_DM
6
Single Avalanche Current
L = 0.1 mH
I_AS
4
Single Avalanche Energy (Duty Cycle ≤ 1 %)
E_AS
0.8
mJ
Continuous Source Current (Diode Conduction)^a
I_S
1.7
1.0
A
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 85 °C
P_D
2.0
1.14
1.0
0.59
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t≤5s
Steady State
Steady State
Symbol
R_thJA
R_thJF
Document Number: 72380
S-82114-Rev. C, 08-Sep-08
Typical
45
90
25
Maximum
62.5
110
30
Unit
°C/W
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