SI3438DV_09 Datasheet, PDF (1/11 Pages) Vishay Siliconix – N-Channel 40-V (D-S) MOSFET

New Product
N-Channel 40-V (D-S) MOSFET
Si3438DV
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
40
0.0355 at V_GS = 10 V
0.0425 at V_GS = 4.5 V
I_D (A)^a
7.4
6.7
Q_g (Typ.)
5.3 nC
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• DC/DC Converter
TSOP-6
Top View
D
1
6
D
3 mm _D
2
G
3
5
D
4
S
2.85 mm
Marking Code
AW XXX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si3438DV-T1-E3 (Lead (Pb)-free)
Si3438DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
(1, 2, 5, 6)
G
(3)
(4)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
40
V
V_GS
± 20
T_C = 25 °C
7.4
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current
T_C = 70 °C
T_A = 25 °C
I_D
T_A = 70 °C
I_DM
5.8
5.5^{b, c}
4.4^{b, c}
A
20
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
2.9
1.6^b,c
T_C = 25 °C
3.5
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
2.2
2^b,c
W
T_A = 70 °C
1.25^b,c
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot
t≤5s
Steady State
Notes:
a. Based on 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 110 °C/W.
Document Number: 68393
S09-0766-Rev. B, 04-May-09
Symbol
R_thJA
R_thJF
Typical
50
28
Maximum
62.5
35
Unit
°C/W
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