SI3437DV_15 Datasheet, PDF (1/12 Pages) Vishay Siliconix – P-Channel 150-V (D-S) MOSFET

P-Channel 150-V (D-S) MOSFET
Si3437DV
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
- 150
0.75 at V_GS = - 10 V
0.79 at V_GS = - 6 V
I_D (A)^a
- 1.4
- 1.3
Q_g (Typ.)
8 nC
TSOP-6
Top View
D
1
6
D
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• 100 % R_g and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Active Clamp Circuits in DC/DC Power Supplies
S
3 mm D
2
G
3
5
D
4
S
2.85 mm
Marking Code
AH XXX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si3437DV-T1-E3 (Lead (Pb)-free)
Si3437DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
V_GS
- 150
V
± 20
T_C = 25 °C
- 1.4
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current
T_C = 70 °C
T_A = 25 °C
I_D
T_A = 70 °C
I_DM
- 1.1
- 1.1^b,c
- 0.88^b,c
A
-5
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
T_C = 25 °C
T_A = 25 °C
I_S
L = 0.1 mH
I_AS
E_AS
- 2.6
1.6^b,c
5
1.25
mJ
T_C = 25 °C
3.2
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
2.1
2^b,c
W
T_A = 70 °C
1.25^b,c
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot
t≤5s
Steady State
Notes:
a. T_C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 110 °C/W.
Symbol
R_thJA
R_thJF
Typical
51
32
Maximum
62.5
39
Unit
°C/W
Document Number: 73899
S09-0766-Rev. B, 04-May-09
www.vishay.com
1