SI3434DV Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

New Product
N-Channel 30-V (D-S) MOSFET
Si3434DV
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
30
r_DS(on) (W)
0.034 @ V_GS = 4.5 V
0.050 @ V_GS = 2.5 V
I_D (A)
6.1
5.0
FEATURES
D TrenchFETr Power MOSFET
D 2.5-V Rating for 30-V N-Channel
D Low r_DS(on) for Footprint Area
APPLICATIONS
D Li-lon Battery Protection
3 mm
TSOP-6
Top View
1
6
2
5
3
4
2.85 mm
(1, 2, 5, 6) D
(3) G
(4) S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
30
"12
6.1
4.6
4.9
3.6
30
1.7
1.0
2.0
1.14
1.3
0.73
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
t v 5 sec
Steady State
Steady State
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71610
S-03617—Rev. A, 17-Apr-01
Symbol
R_thJA
R_thJF
Typical
40
90
25
Maximum
62.5
110
30
Unit
_C/W
www.vishay.com
1