SI3433CDV Datasheet, PDF (1/7 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

New Product
P-Channel 20-V (D-S) MOSFET
Si3433CDV
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.038 at V_GS = - 4.5 V
- 20
0.046 at V_GS = - 2.5 V
0.060 at V_GS = - 1.8 V
I_D (A)^a
-6
-6
-6
Q_g (Typ.)
18 nC
FEATURES
• TrenchFET^® Power MOSFET
APPLICATIONS
• Load Switch
• Notebook
RoHS
COMPLIANT
3 mm
TSOP-6
Top View
1
6
2
5
3
4
2.85 mm
Marking Code
AX XXX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si3433CDV-T1-E3 (Lead (Pb)-free)
(4) S
(3) G
(1, 2, 5, 6) D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
T_C = 25 °C
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
T_A = 70 °C
Pulsed Drain Current
Continuous Source-Drain Diode Current
I_DM
T_C = 25 °C
T_A = 25 °C
I_S
Maximum Power Dissipation
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
P_D
T_A = 70 °C
Operating Junction and Storage Temperature Range
T_J, T_stg
Limit
- 20
± 8.0
- 6.0^a
- 6.0^a
- 5.2^{b, c}
- 4.2^{b, c}
- 20
- 2.7
- 1.3^{b, c}
3.3
2.1
1.6^{b, c}
1.0^{b, c}
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot (Drain)
t≤5s
Steady State
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 110 °C/W.
Symbol
R_thJA
R_thJF
Typical
60
25
Maximum
80
38
Unit
V
A
W
°C
Unit
°C/W
Document Number: 68803
S-81950-Rev. A, 25-Aug-08
www.vishay.com
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