SI3430DV-T1-GE3 Datasheet, PDF (1/9 Pages) Vishay Siliconix – N-Channel 100-V (D-S) MOSFET

N-Channel 100-V (D-S) MOSFET
Si3430DV
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
100
0.170 at V_GS = 10 V
0.185 at V_GS = 6.0 V
I_D (A)
2.4
2.3
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• High-Efficiency PWM Optimized
• 100 % R_g Tested
• Compliant to RoHS Directive 2002/95/EC
3 mm
TSOP-6
Top V iew
1
6
2
5
3
4
(1, 2, 5, 6) D
(3) G
2.85 mm
Ordering Information: Si3430DV-T1-E3 (Lead (Pb)-free)
Si3430DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
(4) S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
100
V
V_GS
± 20
Continuous Drain Current (T_J = 175 °C)^a
Pulsed Drain Current
T_A = 25 °C
T_A = 85 °C
I_D
2.4
1.8
1.7
1.3
A
I_DM
8
Avalanche Current
I_AR
6
L = 0.1 mH
Repetitive Avalanche Energy (Duty Cycle ≤ 1 %)
E_AR
1.8
mJ
Continuous Source Current (Diode Conduction)^a
I_S
1.7
1.0
A
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 85 °C
P_D
2.0
1.14
1.0
0.59
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t≤5s
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
45
90
25
Maximum
62.5
110
30
Unit
°C/W
Document Number: 71235
S09-0766-Rev. C, 04-May-09
www.vishay.com
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