SI3429EDV Datasheet, PDF (1/11 Pages) Vishay Siliconix – P-Channel 20 V (D-S) MOSFET

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Si3429EDV
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
-20
R_DS(on) (Ω) MAX.
0.0210 at V_GS = -4.5 V
0.0240 at V_GS = -2.5 V
0.0380 at V_GS = -1.8 V
I_D (A) ^{a, e}
-8
-8
-8
Q_g (TYP.)
43.2 nC
TSOP-6 Single
S
4
D
5
D
6
3
G
2
D
1
D
Top View
Marking Code: BM
Ordering Information:
Si3429EDV-T1-GE3 (lead (Pb)-free and halogen-free)
FEATURES
• TrenchFET^® power MOSFET
• 100 % R_g tested
• Built-in ESD protection
- Typical ESD performance 3000 V
• Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS
S
• Power management for portable
and consumer
- Load switches
- DC/DC converters
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current (t = 300 μs)
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
T_C = 25 °C
T_A = 25 °C
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
LIMIT
-20
±8
-8 ^e
-8 ^e
-8 ^{b, c, e}
-6.4 ^{b, c}
-40
-3.5
-1.7 ^{b, c}
4.2
2.7
2 ^{b, c}
1.3 ^{b, c}
-55 to 150
UNIT
V
A
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient ^{b, d}
Maximum Junction-to-Foot (Drain)
t≤5s
Steady State
Notes
a. T_C = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 110 °C/W.
e. Package limited.
SYMBOL
R_thJA
R_thJF
TYPICAL
45
25
MAXIMUM
62.5
30
UNIT
°C/W
S14-0913-Rev. A, 28-Apr-14
1
Document Number: 62946
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000