SI3424CDV Datasheet, PDF (1/11 Pages) Vishay Siliconix – N-Channel 30 V (D-S) MOSFET

N-Channel 30 V (D-S) MOSFET
Si3424CDV
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) ()
0.026 at V_GS = 10 V
30
0.032 at V_GS = 4.5 V
I_D (A)^{a, b}
8
8
Q_g (Typ.)
4.2
TSOP-6
Top View
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch for Portable Devices
• DC/DC Converters
D
1
3 mm D
2
G
3
6
D
5
D
4
S
2.85 mm
Marking Code
BC XX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si3424CDV-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
(1, 2, 5, 6)
G
(3)
(4)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
30
V_GS
± 20
V
T_C = 25 °C
8^a
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
7.7
7.2^{c, d}
A
T_A = 70 °C
5.7^{c, d}
Pulsed Drain Current (t = 300 µs)
I_DM
20
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
3
1.7^{c, d}
A
T_C = 25 °C
3.6
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
2.3
2.0^{c, d}
W
T_A = 70 °C
1.3^{c, d}
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^e
Maximum Junction-to-Foot (Drain)
t 5 s
Steady State
Notes:
a. Package limited.
b. Based on T_C = 25 °C.
c. Surface mounted on 1" x 1" FR4 board.
d. t = 5 s.
e. Maximum under steady state conditions is 110 °C/W.
Symbol
R_thJA
R_thJF
Typical
50
28
Maximum
62.5
35
Unit
°C/W
Document Number: 67443
www.vishay.com
S11-0863-Rev. A, 02-May-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000