SI3424BDV Datasheet, PDF (1/7 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

New Product
N-Channel 30-V (D-S) MOSFET
Si3424BDV
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
0.028 at V_GS = 10 V
30
0.038 at V_GS = 4.5 V
I_D (A)
8^a
7
Q_g (Typ)
6.2
FEATURES
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
APPLICATIONS
• Load Switch for Portable Devices
RoHS
COMPLIANT
TSOP-6
Top View
D
1
3 mm D
2
G
3
6
D
5
D
4
S
2.85 mm
Marking Code
AG XX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si3424BDV-T1-E3 (Lead (Pb)-free)
D
(1, 2, 5, 6)
G
(3)
(4)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
V_GS
30
± 20
V
T_C = 25 °C
8^{a, b}
Continuous Drain Current (T_J = 150 °C)^a
T_C = 70 °C
T_A = 25 °C
I_D
6.7
7^{c, d}
A
T_A = 70 °C
5.6^{c, d}
Pulsed Drain Current
I_DM
30
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
2.48
1.74^{c, d}
A
T_C = 25 °C
2.98
Maximum Power Dissipation^a
T_C = 70 °C
T_A = 25 °C
P_D
1.9
2.1^{c, d}
W
T_A = 70 °C
1.3^{c, d}
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^c
Maximum Junction-to-Foot (Drain)
t≤5s
Steady State
Steady State
Notes:
a. Package Limited.
b. Based on T_C = 25 °C.
c. Surface Mounted on 1" x 1" FR4 board.
d. t = 5 s.
Symbol
R_thJA
R_thJA
R_thJF
Typical
50
90
35
Maximum
60
110
42
Unit
°C/W
Document Number: 74623
S-72692-Rev. B, 24-Dec-07
www.vishay.com
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