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SI3421DV Datasheet, PDF (1/11 Pages) Vishay Siliconix – P-Channel 30 V (D-S) MOSFET
P-Channel 30 V (D-S) MOSFET
Si3421DV
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) () Max.
0.0192 at VGS = -10 V
-30
0.0232 at VGS = -6 V
0.0270 at VGS = -4.5 V
TSOP-6
Top View
ID (A)d,e
-8
-8
-8
Qg (Typ.)
21 nC
D
1
6
D
3 mm D
2
5
D
G
3
4
S
2.85 mm
Ordering Information:
Si3421DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
Available
APPLICATIONS
• Load Switches
S
• Adaptor Switch
• DC/DC Converter
• For Mobile Computing/Consumer
G
Marking Code
BI XX
Lot Traceability
and Date Code
Part # Code
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 100 µs)
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
IDM
-30
V
± 20
-8e
-8e
-8.3a, b
-6.7a, b
A
-50
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
TC = 25 °C
TA = 25 °C
IS
L = 0.1 mH
IAS
EAS
-3.5
-1.7a, b
-15
11.25
mJ
TC = 25 °C
4.2
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
2.7
2a, b
W
TA = 70 °C
1.3a, b
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, c
Maximum Junction-to-Foot
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under steady state conditions is 110 °C/W.
d. Based on TC = 25 °C.
e. Package limited.
t 10 s
Steady State
Symbol
RthJA
RthJF
Typical
40
25
Maximum
62.5
30
Unit
°C/W
Document Number: 62921
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
S13-2289-Rev. A, 04-Nov-13
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000