SI3420DV Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 200-V (D-S) MOSFET

N-Channel 200-V (D-S) MOSFET
Si3420DV
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
200
3.7 @ V_GS = 10 V
I_D (A)
0.5
FEATURES
D 100% R_g Tested
3 mm
TSOP-6
Top View
1
6
2
5
3
4
2.85 mm
Ordering Information: Si3420DV-T1
(1, 2, 5, 6) D
(3) G
(4) S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current (10 ms Pulse Width)
Avalanche Current
Single Avalanche Energy
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
L = 0.1 mH
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_AS
E_AS
I_S
P_D
T_J, T_stg
200
"20
0.5
0.37
0.4
0.29
1
1
0.05
1
2.1
1.14
1.34
0.73
- 55 to 150
Unit
V
A
mJ
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot
t v 5 sec
Steady State
Steady State
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71097
S-31725—Rev. B, 18-Aug-03
Symbol
R_thJA
R_thJF
Typical
50
90
35
Maximum
60
110
42
Unit
_C/W
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