SI3417DV Datasheet, PDF (1/11 Pages) Vishay Siliconix – P-Channel 30 V (D-S) MOSFET

P-Channel 30 V (D-S) MOSFET
Si3417DV
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) () Max.
- 30
0.0252 at V_GS = - 10 V
0.0360 at V_GS = - 4.5 V
I_D (A)^d,e
-8
-8
Q_g (Typ.)
15 nC
TSOP-6
Top View
D
1
6
D
3 mm D
2
5
D
G
3
4
S
2.85 mm
Ordering Information:
Si3417DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• TrenchFET^® Power MOSFET
• 100 % R_g and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
Available
APPLICATIONS
• Load Switches
S
• Adaptor Switch
• DC/DC Converter
• For Mobile Computing/Consumer
G
Marking Code
BH XX
Lot Traceability
and Date Code
Part # Code
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current (t = 100 µs)
V_DS
V_GS
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
I_D
T_A = 70 °C
I_DM
- 30
V
± 20
- 8^e
- 8^e
- 7.3^{a, b}
- 5.8^{a, b}
A
- 50
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
T_C = 25 °C
T_A = 25 °C
I_S
L = 0.1 mH
I_AS
E_AS
- 3.5
- 1.7^{a, b}
- 20
20
mJ
T_C = 25 °C
4.2
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
2.7
2^{a, b}
W
T_A = 70 °C
1.3^{a, b}
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{a, c}
Maximum Junction-to-Foot
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under steady state conditions is 110 °C/W.
d. Based on T_C = 25 °C.
e. Package limited.
t 10 s
Steady State
Symbol
R_thJA
R_thJF
Typical
40
25
Maximum
62.5
30
Unit
°C/W
Document Number: 62890
For technical questions, contact: [e-mail]
www.vishay.com
S13-1815-Rev. A, 12-Aug-13
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000