SI3407DV Datasheet, PDF (1/7 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

New Product
P-Channel 20-V (D-S) MOSFET
Si3407DV
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.0240 at V_GS = - 4.5 V
- 20
0.0372 at V_GS = - 2.5 V
I_D (A)
- 8.0^a
- 8.0^a
Q_g (Typ.)
21 nC
TSOP-6
Top View
FEATURES
• TrenchFET^® Power MOSFET
• PWM Optimized
• 100 % R_g Tested
• 100 % UIS Tested
APPLICATIONS
• Load Switch
- Notebook PC
- Portable Devices
(4) S
RoHS
COMPLIANT
1
6
3 mm
2
5
3
4
2.85 mm
Marking Code
07 XXX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si3407DV-T1-E3 (Lead (Pb)-free)
(3) G
(1, 2, 5, 6) D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
Continuous Source-Drain Diode Current
Avalanche Current
Single Pulse Avalanche Energy
T_C = 25 °C
T_A = 25 °C
L = 0.1 mH
T_C = 25 °C
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_S
I_AS
E_AS
P_D
T_J, T_stg
Limit
- 20
± 12
- 8.0^a
- 8.0^a
- 7.5^{b, c}
- 6.0^{b, c}
- 25
- 3.5
- 1.7^{b, c}
-8
3.2
4.2
2.7
2.0^{b, c}
1.3^{b, c}
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot (Drain)
t≤5s
Steady State
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 110 °C/W.
Symbol
R_thJA
R_thJF
Typical
45
25
Maximum
62.5
30
Unit
°C/W
Document Number: 69987
S-80673-Rev. A, 31-Mar-08
www.vishay.com
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