SI3127DV Datasheet, PDF (1/11 Pages) Vishay Siliconix – P-Channel 60 V (D-S) MOSFET

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Si3127DV
Vishay Siliconix
P-Channel 60 V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
-60
R_DS(on) (Ω) MAX.
0.089 at V_GS = -10 V
0.146 at V_GS = -4.5 V
I_D (A) ^d
-5.1
-4
TSOP-6 Single
S
4
D
5
D
6
Q_g (TYP.)
10.1 nC
FEATURES
• TrenchFET^® power MOSFET
• 100 % R_g and UIS tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Load switches
S
• DC/DC converter
3
G
2
D
1
D
Top View
Marking Code: BL
Ordering Information:
Si3127DV-T1-GE3 (lead (Pb)-free and halogen-free)
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current (t = 100 μs)
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
T_C = 25 °C
T_A = 25 °C
L = 0.1 mH
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
V_DS
V_GS
I_D
I_DM
I_S
I_AS
E_AS
P_D
T_J, T_stg
LIMIT
-60
± 20
-5.1
-4.1
-3.5 ^a,b
-2.8 ^a,b
-20
-3.5
-1.7 ^a,b
-15
11.25
4.2
2.7
2 ^a,b
1.3 ^a,b
-55 to 150
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient ^a,c
Maximum Junction-to-Foot
t ≤ 10 s
Steady State
Notes
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under steady state conditions is 110 °C/W.
d. Based on T_C = 25 °C.
SYMBOL
R_thJA
R_thJF
TYPICAL
40
25
MAXIMUM
62.5
30
UNIT
°C/W
S14-0767-Rev. A, 14-Apr-14
1
Document Number: 64282
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000