SI2392DS Datasheet, PDF (1/10 Pages) Vishay Siliconix – N-Channel 100 V (D-S) MOSFET

N-Channel 100 V (D-S) MOSFET
Si2392DS
Vishay Siliconix
MOSFET PRODUCT SUMMARY
V_DS (V)
R_DS(on) () Max.
I_D (A)^a
0.126 at V_GS = 10 V
3.1
100
0.144 at V_GS = 6 V
2.9
0.189 at V_GS = 4.5 V
2.6
Q_g (Typ.)
2.9 nC
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2392DS (E2)*
* Marking Code
Ordering Information:
Si2392DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• TrenchFET^® Power MOSFET
• 100 % R_g and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• DC/DC Converters / Boost Converters
• Load Switch
• LED Backlighting in LCD TVs
• Power Management for Mobile Computing
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
T_C = 25 °C
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
T_A = 70 °C
Pulsed Drain Current (t = 300 µs)
I_DM
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
I_AS
E_AS
T_C = 25 °C
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
T_A = 70 °C
Operating Junction and Storage Temperature Range
T_J, T_stg
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot (Drain)
5 s
Steady State
Notes:
a. Based on T_C = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 166 °C/W.
Symbol
R_thJA
R_thJF
Typical
75
40
Limit
100
± 20
3.1
2.5
2.2^b,c
1.8^b,c
8
2.1
1^{b, c}
3
0.45
2.5
1.6
1.25^{b, c}
0.8^{b, c}
- 55 to 150
Maximum
100
50
Unit
V
A
mJ
W
°C
Unit
°C/W
Document Number: 64024
For technical questions, contact: [e-mail]
www.vishay.com
S13-0793-Rev. A, 15-Apr-13
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000