SI2369DS Datasheet, PDF (1/10 Pages) Vishay Siliconix – Material categorization

P-Channel 30 V (D-S) MOSFET
Si2369DS
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) () Max.
0.029 at V_GS = - 10 V
- 30
0.034 at V_GS = - 6 V
0.040 at V_GS = - 4.5 V
TO-236
(SOT-23)
I_D (A)^a
- 7.6
-7
- 6.5
Q_g (Typ.)
11.4 nC
G1
S2
3D
FEATURES
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• For Mobile Computing
- Load Switch
S
- Notebook Adaptor Switch
- DC/DC Converter
G
Top View
Si2369DS (H9)*
* Marking Code
Ordering Information:
Si2369DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
V_DS
V_GS
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
I_D
T_A = 70 °C
- 30
± 20
- 7.6
- 6.1
- 5.4^b,c
- 4.3^b,c
Pulsed Drain Current (t = 100 µs)
Continous Source-Drain Diode Current
Maximum Power Dissipation
I_DM
T_C = 25 °C
T_A = 25 °C
I_S
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
P_D
T_A = 70 °C
- 80
- 2.1
- 1^b,c
2.5
1.6
1.25^b,c
0.8^b,c
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^b,d
Maximum Junction-to-Foot (Drain)
t5s
Steady State
Notes:
a. Based on T_C = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 166 °C/W.
Symbol
R_thJA
R_thJF
Typical
75
40
Maximum
100
50
Unit
V
A
W
°C
Unit
°C/W
Document Number: 62865
For technical questions, contact: [e-mail]
www.vishay.com
S13-1663-Rev. A, 29-Jul-13
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000