SI2365EDS Datasheet, PDF (1/10 Pages) Vishay Siliconix – P-Channel 20 V (D-S) MOSFET

P-Channel 20 V (D-S) MOSFET
Si2365EDS
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) () Max.
0.0320 at V_GS = - 4.5 V
- 20
0.0410 at V_GS = - 2.5 V
0.0675 at V_GS = - 1.8 V
TO-236
(SOT-23)
I_D (A)^a
- 5.9
- 5.2
- 4.3
Q_g (Typ.)
13.8 nC
G1
3D
FEATURES
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
• Built-in ESD Protection
- Typical ESD Performance 3000 V
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Power Management for Portable and Consumer
- Load Switches
- DC/DC Converters
S
S2
Top View
Si2365EDS (H5)*
* Marking Code
Ordering Information:
Si2365EDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
- 20
V_GS
±8
V
T_C = 25 °C
- 5.9
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
- 4.7
- 4.5^{b, c}
T_A = 70 °C
- 3.6^{b, c}
A
Pulsed Drain Current (t = 300 µs)
I_DM
- 20
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
- 1.4
- 1^{b, c}
T_C = 25 °C
1.7
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
1.1
1^{b, c}
W
T_A = 70 °C
0.6^{b, c}
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^{d, e}
T_J, T_stg
- 55 to 150
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
t5s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. T_C = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 175 °C/W.
Symbol
R_thJA
R_thJF
Typical
100
60
Maximum
130
75
Unit
°C/W
Document Number: 63199
S13-1505-Rev. C, 01-Jul-13
For technical questions, contact: [e-mail]
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000