SI2351DS Datasheet, PDF (1/7 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

P-Channel 20-V (D-S) MOSFET
Si2351DS
Vishay Siliconix
MOSFET PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
I_D (A)^a
0.115 at V_GS = - 4.5 V
- 3.0
- 20
0.205 at V_GS = - 2.5 V
- 2.2
Q_g (Typ.)
3.2 nC
FEATURES
• Halogen-free Option Available
• TrenchFET^® Power MOSFET
• PWM Optimized
• 100 % R_g Tested
RoHS
COMPLIANT
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2351DS (G1)*
* Marking Code
Ordering Information: Si2351DS-T1-E3 (Lead (Pb)-free)
Si2351DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
T_C = 25 °C
T_A = 25 °C
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot (Drain)
≤5s
Steady State
Notes:
a. Based on T_C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 130 °C/W.
Symbol
R_thJA
R_thJF
Typical
90
60
Limit
- 20
± 12
- 2.8
- 2.4
- 2.2^{b, c}
- 1.8^{b, c}
- 10
- 2.0
- 0.91^{b, c}
2.1
1.5
1.0^{b, c}
0.7^{b, c}
- 55 to 150
Maximum
115
75
Unit
V
A
W
°C
Unit
°C/W
Document Number: 73702
S-80642-Rev. C, 24-Mar-08
www.vishay.com
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